PART |
Description |
Maker |
GL194A |
N P N S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
|
E-Tech Electronics LTD GTM CORPORATION
|
MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 600 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D |
From old datasheet system TMOS POWER FET 3.0 AMPERES 1000 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 500 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
PMV45EN PMV45EN-01 |
uTrenchMOS tm enhanced logic level FET N-channel TrenchMOS logic level FET mTrenchMOS enhanced logic level FET From old datasheet system mTrenchMOSTM enhanced logic level FET
|
NXP Semiconductors N.V. Philips
|
2SJ555 |
0.036 ohm, POWER, FET Silicon P-Channel MOS FET
|
Hitachi Semiconductor
|
ATF-13XXX ATF-10XXX |
Low Noise Gallium Arsenide FET(低噪声砷化镓 FET)
|
Agilent(Hewlett-Packard)
|
BUK9MPP-65PLL |
Dual TrenchPLUS FET Logic Level FET
|
NXP Semiconductors
|